GaInP/GaAs HBT broadband monolithic transimpedance amplifiers and their high frequency small and large signal characteristics

被引：1
|
作者：
Park, JW [1 ]
Mohammadi, S [1 ]
Pavlidis, D [1 ]
Dua, C [1 ]
Guyaux, JL [1 ]
Garcia, JC [1 ]
机构：
[1] Univ Michigan, Dept EECS, Ann Arbor, MI 48109 USA
来源：
1998 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM | 1998年
关键词：
D O I：
10.1109/RFIC.1998.682075
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Monolithic broadband transimpedance amplifiers were developed using GaInP/ GaAs single HBTs. The HBTs showed a cut off frequency (f(T)) of 60GHz and maximum oscillation frequency (f(max)) of 100GHz. The fabricated amplifiers had a maximum bandwidth of 19GHz and an associated transimpedance gain of 47dB Omega The large signal characteristics of two transimpedance amplifier designs with similar gain were also investigated and showed that the cascode approach is much less sensitive to input power level.
引用
收藏
页码：179 / 182
页数：4
相关论文
共 50 条
  • [1] GaInP/GaAs HBT broadband monolithic transimpedance amplifiers and their high frequency small and large signal characteristics
    Park, JW
    Mohammadi, S
    Pavlidis, D
    Dua, C
    Guyaux, JL
    Garcia, JC
    1998 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 1998, : 39 - 42
  • [2] Monolithic broadband transimpedance amplifiers and their high frequency small and large signal characteristics using CBE-based GaInP/GaAs HBT technology
    Park, JW
    Mohammadi, S
    Pavlidis, D
    Dua, C
    Guyaux, JL
    Garcia, JC
    SOLID-STATE ELECTRONICS, 2000, 44 (11) : 2059 - 2067
  • [3] High-gain GaInP/GaAs HBT monolithic transimpedance amplifier for high-speed optoelectronic receivers
    Mohammadi, S
    Park, JW
    Pavlidis, D
    Dua, C
    Guyaux, JL
    Garcia, JC
    INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 661 - 664
  • [4] Scalable GaInP/GaAs HBT large-signal model
    Rudolph, M.
    Doerner, R.
    Beilenhoff, K.
    Heymann, P.
    IEEE MTT-S International Microwave Symposium Digest, 2000, 2 : 753 - 756
  • [5] Broadband GaInP/GaAs HBT regenerative frequency divider with active loads
    Wei, Hung-Ju
    Meng, Chinchun
    Chang, YuWen
    Huang, Guo-Wei
    2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6, 2007, : 2172 - +
  • [6] Scalable GaInP/GaAs HBT large-signal model
    Rudolph, M
    Doerner, R
    Beilenhoff, K
    Heymann, P
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2000, 48 (12) : 2370 - 2376
  • [7] Broadband high-efficiency monolithic InGaP/GaAs HBT power amplifiers for wireless applications
    Jäger, H
    Grebennikov, A
    Heaney, E
    Weigel, R
    INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 2003, 13 (06) : 496 - 510
  • [8] A broadband high efficiency monolithic power amplifier with GaAs HBT
    Li, Shaojun
    Lv, Hongliang
    Zhang, Yimen
    Zhang, Yuming
    Zhang, Yansong
    Asif, Muhammad
    IEICE ELECTRONICS EXPRESS, 2018, 15 (10):
  • [9] GaInP/GaAs HBT technology for high power and high efficiency amplifiers at X-band
    Leier, H
    Riepe, K
    Marten, A
    Seiler, U
    Sledzik, H
    PROCEEDINGS OF THE TWENTY-FOURTH STATE-OF-THE-ART-PROGRAM ON COMPOUND SEMICONDUCTORS, 1996, 96 (02): : 154 - 161
  • [10] Broadband high-efficiency monolithic InGaP/GaAs HBT power amplifiers for 3G handset applications
    Jäger, H
    Grebennikov, A
    Heaney, E
    Weigel, R
    2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2002, : 1035 - 1038
12345