GaInP/GaAs HBT broadband monolithic transimpedance amplifiers and their high frequency small and large signal characteristics

被引：1

作者：

Park, JW ^{[1
]}

Mohammadi, S ^{[1
]}

Pavlidis, D ^{[1
]}

Dua, C ^{[1
]}

Guyaux, JL ^{[1
]}

Garcia, JC ^{[1
]}

机构：

[1] Univ Michigan, Dept EECS, Ann Arbor, MI 48109 USA

来源：

1998 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM | 1998年

关键词：

D O I：

10.1109/RFIC.1998.682075

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Monolithic broadband transimpedance amplifiers were developed using GaInP/ GaAs single HBTs. The HBTs showed a cut off frequency (f(T)) of 60GHz and maximum oscillation frequency (f(max)) of 100GHz. The fabricated amplifiers had a maximum bandwidth of 19GHz and an associated transimpedance gain of 47dB Omega The large signal characteristics of two transimpedance amplifier designs with similar gain were also investigated and showed that the cascode approach is much less sensitive to input power level.

引用

页码：179 / 182

页数：4

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