Electrical characteristics of post-gate-annealed AlGaN/GaN HEMTs on sapphire substrate

被引：0

作者：

Mahajan, Somna S. ^{[1
]}

Tomer, Anushree ^{[1
]}

Malik, Amit ^{[1
]}

Laishram, Robert ^{[1
]}

Agarwal, Vanita R. ^{[1
]}

Naik, A. A. ^{[1
]}

机构：

[1] Solid State Phys Lab, Lucknow Rd, Delhi 110054, India

来源：

2014 IEEE 2ND INTERNATIONAL CONFERENCE ON EMERGING ELECTRONICS (ICEE) | 2014年

关键词：

HEMT; Schottky contact annealing; DC characteristics; MOBILITY TRANSISTORS; MECHANISM; LEAKAGE; GAN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN HEMTs were post-gate-annealed at 300 degrees C for 2 min and longer. DC characteristics of AlGaN/GaN HEMTs as a function of annealing cycle duration were studied. Improvement in HEMT parameters such as drain source saturation current, transconductance, gate leakage current and off-state breakdown voltage (V-boff) was observed with increase in annealing duration. This was correlated with surface/interface traps removal, leading to improvement in access region resistance between source-drain and gate drain regions.

引用

页数：3

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