Gate metal dependent electrical characteristics of AlGaN/GaN HEMTs

被引：3
|
作者：
Koo, Sang-Mo [1 ]
Kang, Min-Seok [1 ]
机构：
[1] Kwangwoon Univ, Dept Elect Mat Engn, Seoul 136701, South Korea
来源：
MATERIALS RESEARCH BULLETIN | 2014年 / 58卷
基金：
新加坡国家研究基金会;
关键词：
Nitrides; Metals; Semiconductors; Electronic structure; Electrical properties;
D O I：
10.1016/j.materresbull.2014.05.001
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) and the effect of the barrier height of Schottky gate metals. It is found that the threshold voltage of the HEMT structures with the Ni Schottky contact shows a positive shift compared to that of the Ti Schottky contacts (Delta V-th = 2.9V). The maximum saturation current of the HEMT structures with the Ti Schottky contact (similar to 1.4 x 10(7) A/cm(2)) is found to be similar to 2.5 times higher than that of the Ni Schottky contact (2.9 x 10(7) A/cm(2)). The conduction mechanisms have been examined by comparing the experimental results with numerical simulations, which confirm that the increased barrier height is mainly attributed to the reduction of 2-DEG concentration. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：178 / 180
页数：3
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