Electrical characteristics of post-gate-annealed AlGaN/GaN HEMTs on sapphire substrate

被引：0
|
作者：
Mahajan, Somna S. [1 ]
Tomer, Anushree [1 ]
Malik, Amit [1 ]
Laishram, Robert [1 ]
Agarwal, Vanita R. [1 ]
Naik, A. A. [1 ]
机构：
[1] Solid State Phys Lab, Lucknow Rd, Delhi 110054, India
来源：
2014 IEEE 2ND INTERNATIONAL CONFERENCE ON EMERGING ELECTRONICS (ICEE) | 2014年
关键词：
HEMT; Schottky contact annealing; DC characteristics; MOBILITY TRANSISTORS; MECHANISM; LEAKAGE; GAN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
AlGaN/GaN HEMTs were post-gate-annealed at 300 degrees C for 2 min and longer. DC characteristics of AlGaN/GaN HEMTs as a function of annealing cycle duration were studied. Improvement in HEMT parameters such as drain source saturation current, transconductance, gate leakage current and off-state breakdown voltage (V-boff) was observed with increase in annealing duration. This was correlated with surface/interface traps removal, leading to improvement in access region resistance between source-drain and gate drain regions.
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页数：3
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