Heteroepitaxial diamond growth on platinum(111) by Shintani process

被引:0
|
作者
Yokota, Y
Tachibana, T
Miyata, K
Kobashi, K
Shintani, Y
机构
[1] KOBE STEEL LTD,ELECT RES LAB,NISHI KU,KOBE,HYOGO 65122,JAPAN
[2] UNIV TOKUSHIMA,FAC ENGN,DEPT ELECT & ELECT ENGN,TOKUSHIMA 770,JAPAN
来源
DIAMOND FILMS AND TECHNOLOGY | 1996年 / 6卷 / 03期
关键词
heteroepitaxy; platinum; single crystal; CVD; microwave; SrTiO3;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Diamond films were grown on single crystal platinum bulk and films with(111) surface by microwave plasma chemical vapor deposition. It was observed by scanning electron microscopy (SEM) that, in both cases, many of the neighboring facets coalesced with each other. X-ray diffraction analyses revealed that the (111) planes of the diamond films were parallel to the substrate surface and azimuthally oriented. The early stage of diamond growth was observed by SEM and it was found that positional and orientational changes of diamond particles occur on the platinum surface.
引用
收藏
页码:165 / 170
页数:6
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