Diamond films heteroepitaxially grown on platinum (111)

被引:49
|
作者
Tachibana, T
Yokota, Y
Miyata, K
Onishi, T
Kobashi, K
Tarutani, M
Takai, Y
Shimizu, R
Shintani, Y
机构
[1] Kobe Steel Ltd, Elect & Informat Technol Lab, Nishi Ku, Kobe, Hyogo 65122, Japan
[2] Osaka Univ, Dept Appl Phys, Osaka 565, Japan
[3] Univ Tokushima, Dept Elect & Elect Engn, Tokushima 770, Japan
来源
PHYSICAL REVIEW B | 1997年 / 56卷 / 24期
关键词
D O I
10.1103/PhysRevB.56.15967
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Diamond films were grown by microwave plasma chemical vapor deposition on as-received platinum (Pt) foils, specially processed Pt foils with (111) domains, bulk single-crystal Pt with a (111) surface, and single-crystal Pt(111) films deposited on strontium titanate (111). In all cases, the substrate surfaces had been significantly roughened by scratching to enhance diamond nucleation. Nevertheless, it was found by scanning electron microscopy that diamond films grown on the (111) areas of the above substrates had azimuthally aligned (111) faces, where a significant spontaneous coalescence developed between neighboring faces. An observation of the diamond-Pt interface region by transmission electron microscopy indicated that diamond crystals had an epitaxial relationship with Pt, and a (111) crystal at a diamond film surface contained an extremely low density of dislocations on the order of 10(8)/cm(2). Effects of H-2 and CH4/H-2 plasma on a Pt surface, as well as the nucleation and growth process, were investigated in detail. [S0163-1829(97)01047-3].
引用
收藏
页码:15967 / 15981
页数:15
相关论文
共 50 条
  • [1] Structural analysis of cubic boron nitride (111) films heteroepitaxially grown on diamond (111) substrates
    Hirama, Kazuyuki
    Taniyasu, Yoshitaka
    Yamamoto, Hideki
    Kumakura, Kazuhide
    [J]. JOURNAL OF APPLIED PHYSICS, 2019, 125 (11)
  • [2] HETEROEPITAXIALLY GROWN DIAMOND ON A C-BN (111) SURFACE
    WANG, L
    PIROUZ, P
    ARGOITIA, A
    MA, JS
    ANGUS, JC
    [J]. APPLIED PHYSICS LETTERS, 1993, 63 (10) : 1336 - 1338
  • [3] TEM observation of nucleation site of diamond particles heteroepitaxially grown on Pt (111) substrate
    Zhou, G
    Takai, Y
    Shimizu, R
    [J]. ELECTRON MICROSCOPY 1998, VOL 2: MATERIALS SCIENCE 1, 1998, : 363 - 364
  • [4] Pseudovertical Schottky Diodes on Heteroepitaxially Grown Diamond
    Weippert, Juergen
    Reinke, Philipp
    Benkhelifa, Fouad
    Czap, Heiko
    Giese, Christian
    Kirste, Lutz
    Stranak, Patrik
    Kustermann, Jan
    Engels, Jan
    Lebedev, Vadim
    [J]. CRYSTALS, 2022, 12 (11)
  • [5] X-ray diffraction pole figure measurements of diamond films grown on platinum (111)
    Tachibana, T
    Yokota, Y
    Kobashi, K
    Shintani, Y
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (09) : 4327 - 4330
  • [6] CHARACTERIZATION OF ULTRATHIN CAF2 FILMS HETEROEPITAXIALLY GROWN ON SI(111) SURFACES
    ANDO, K
    SAIKI, K
    SATO, Y
    KOMA, A
    ASANO, T
    ISHIWARA, H
    FURUKAWA, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (02): : L170 - L172
  • [7] Strain in GaP films heteroepitaxially grown on Si
    Nakamura, K.
    Fuyuki, T.
    Matsunami, H.
    [J]. Zairyo/Journal of the Society of Materials Science, Japan, 2001, 50 (08) : 904 - 907
  • [8] The coalescence of [001]diamond grains heteroepitaxially grown on (001) silicon
    Jiang, X
    Jia, CL
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (25) : 3902 - 3904
  • [9] Heteroepitaxial growth of {111}-oriented diamond films on platinum {111}/sapphire{0001} substrates
    Tachibana, T
    Yokota, Y
    Kobashi, K
    Yoshimoto, M
    [J]. JOURNAL OF CRYSTAL GROWTH, 1999, 205 (1-2) : 163 - 168
  • [10] Heteroepitaxial growth of {111}-oriented diamond films on platinum{111}/sapphire{0001} substrates
    Tachibana, Takeshi
    Yokota, Yoshihiro
    Kobashi, Koji
    Yoshimoto, Mamoru
    [J]. Journal of Crystal Growth, 1999, 205 (01): : 163 - 168