Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer

被引：47

作者：

Li, Yingtao ^{[1
,2
]}

Long, Shibing ^{[1
]}

Lv, Hangbing ^{[1
]}

Liu, Qi ^{[1
]}

Wang, Yan ^{[1
,2
]}

Zhang, Sen ^{[1
]}

Lian, Wentai ^{[1
]}

Wang, Ming ^{[1
]}

Zhang, Kangwei ^{[1
]}

Xie, Hongwei ^{[1
,2
]}

Liu, Su ^{[2
]}

Liu, Ming ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China

[2] Lanzhou Univ, Inst Microelect, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China

来源：

NANOTECHNOLOGY | 2011年 / 22卷 / 25期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1088/0957-4484/22/25/254028

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The stabilization of the resistive switching characteristics is important to resistive random access memory (RRAM) device development. In this paper, an alternative approach for improving resistive switching characteristics in ZrO2-based resistive memory devices has been investigated. Compared with the Cu/ZrO2/Pt structure device, by embedding a thin TiOx layer between the ZrO2 and the Cu top electrode, the Cu/TiOx-ZrO2/Pt structure device exhibits much better resistive switching characteristics. The improvement of the resistive switching characteristics in the Cu/TiOx-ZrO2/Pt structure device might be attributed to the modulation of the barrier height at the electrode/oxide interfaces.

引用

页数：5

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