Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer

被引：47
|
作者：
Li, Yingtao [1 ,2 ]
Long, Shibing [1 ]
Lv, Hangbing [1 ]
Liu, Qi [1 ]
Wang, Yan [1 ,2 ]
Zhang, Sen [1 ]
Lian, Wentai [1 ]
Wang, Ming [1 ]
Zhang, Kangwei [1 ]
Xie, Hongwei [1 ,2 ]
Liu, Su [2 ]
Liu, Ming [1 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China
[2] Lanzhou Univ, Inst Microelect, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
来源：
NANOTECHNOLOGY | 2011年 / 22卷 / 25期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1088/0957-4484/22/25/254028
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The stabilization of the resistive switching characteristics is important to resistive random access memory (RRAM) device development. In this paper, an alternative approach for improving resistive switching characteristics in ZrO2-based resistive memory devices has been investigated. Compared with the Cu/ZrO2/Pt structure device, by embedding a thin TiOx layer between the ZrO2 and the Cu top electrode, the Cu/TiOx-ZrO2/Pt structure device exhibits much better resistive switching characteristics. The improvement of the resistive switching characteristics in the Cu/TiOx-ZrO2/Pt structure device might be attributed to the modulation of the barrier height at the electrode/oxide interfaces.
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页数：5
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