An in-line process monitoring method using electron beam induced substrate current

被引：0
|
作者：
Yamada, K [1 ]
Nakamura, T [1 ]
Tsujide, T [1 ]
机构：
[1] NEC Corp Ltd, Device Anal Technol Div, Kanagawa, Japan
来源：
MICROELECTRONICS RELIABILITY | 2001年 / 41卷 / 03期
关键词：
D O I：
10.1016/S0026-2714(00)00204-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In-line process monitoring technology plays a vital role in accelerating yield ramps and quickly identifying and resolving yield excursions in the system on a chip era. We have developed an in-line process monitoring method that uses electron beam induced substrate current. It is especially suitable for deep contacts and via holes. This method makes it possible to monitor non-destructive contacts and the via-hole formation process with a hole-bottom nm-order SiO2 film thickness measurement and a hole-bottom diameter measurement. Moreover, it allows us to evaluate etching-process variation over an 8-inch wafer in less than 20 min. The results can be used for in-line device sorting as well as for decisions regarding the timing of etching machine maintenance. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：455 / 459
页数：5
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