An in-line process monitoring method using electron beam induced substrate current

被引：0

作者：

Yamada, K ^{[1
]}

Nakamura, T ^{[1
]}

Tsujide, T ^{[1
]}

机构：

[1] NEC Corp Ltd, Device Anal Technol Div, Kanagawa, Japan

来源：

MICROELECTRONICS RELIABILITY | 2001年 / 41卷 / 03期

关键词：

D O I：

10.1016/S0026-2714(00)00204-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In-line process monitoring technology plays a vital role in accelerating yield ramps and quickly identifying and resolving yield excursions in the system on a chip era. We have developed an in-line process monitoring method that uses electron beam induced substrate current. It is especially suitable for deep contacts and via holes. This method makes it possible to monitor non-destructive contacts and the via-hole formation process with a hole-bottom nm-order SiO2 film thickness measurement and a hole-bottom diameter measurement. Moreover, it allows us to evaluate etching-process variation over an 8-inch wafer in less than 20 min. The results can be used for in-line device sorting as well as for decisions regarding the timing of etching machine maintenance. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：455 / 459

页数：5

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