Possible failure modes in Press-Pack IGBTs

被引：69

作者：

Tinschert, Lukas ^{[1
,2
]}

Ardal, Atle Rygg ^{[3
]}

Poller, Tilo ^{[1
,2
]}

Bohllaender, Marco ^{[1
,2
]}

Hemes, Magnar ^{[3
]}

Lutz, Josef ^{[1
,2
]}

机构：

[1] Tech Univ Chemnitz, Chair Power Elect, Chemnitz, Germany

[2] Tech Univ Chemnitz, EMC, Chemnitz, Germany

[3] SINTEF Energi AS, Trondheim, Norway

来源：

MICROELECTRONICS RELIABILITY | 2015年 / 55卷 / 06期

关键词：

Press-Pack; IGBT; Packaging; Simulation; Power Cycling; Reliability;

D O I：

10.1016/j.microrel.2015.02.019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reliability of Press-Pack IGBTs is a topic with limited published data and information. This paper presents results of a power cycling test with state-of-the-art high power devices. An accelerated lifetime test scheme was defined, and six out of eight devices were tested until failure. A microscopy analysis has been performed on some of the failed devices, and they have all failed in a very similar manner. In order to gain additional information about the thermal-mechanical stress, a detailed 3D Finite Element Method (FEM)-analysis has been conducted. The combined results from power cycling, microscopy and FEM have been concluded to two possible failure modes in Press-Pack IGBTs: Gate oxide damage and micro arcing. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：903 / 911

页数：9

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