Possible failure modes in Press-Pack IGBTs

被引：69

作者：

Tinschert, Lukas ^{[1
,2
]}

Ardal, Atle Rygg ^{[3
]}

Poller, Tilo ^{[1
,2
]}

Bohllaender, Marco ^{[1
,2
]}

Hemes, Magnar ^{[3
]}

Lutz, Josef ^{[1
,2
]}

机构：

[1] Tech Univ Chemnitz, Chair Power Elect, Chemnitz, Germany

[2] Tech Univ Chemnitz, EMC, Chemnitz, Germany

[3] SINTEF Energi AS, Trondheim, Norway

来源：

MICROELECTRONICS RELIABILITY | 2015年 / 55卷 / 06期

关键词：

Press-Pack; IGBT; Packaging; Simulation; Power Cycling; Reliability;

D O I：

10.1016/j.microrel.2015.02.019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reliability of Press-Pack IGBTs is a topic with limited published data and information. This paper presents results of a power cycling test with state-of-the-art high power devices. An accelerated lifetime test scheme was defined, and six out of eight devices were tested until failure. A microscopy analysis has been performed on some of the failed devices, and they have all failed in a very similar manner. In order to gain additional information about the thermal-mechanical stress, a detailed 3D Finite Element Method (FEM)-analysis has been conducted. The combined results from power cycling, microscopy and FEM have been concluded to two possible failure modes in Press-Pack IGBTs: Gate oxide damage and micro arcing. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：903 / 911

页数：9

共 50 条

[31] Die Current Balancing of a Press-Pack SiC MOSFET
Zhu, Nan
Chen, Min
Yan, Rui
Mantooth, Alan
Xu, Dehong
2018 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2018, : 5824 - 5830
[32] Cryogenic Power Electronics: Press-Pack IGBT Modules
Park, C.
Mauger, M. J.
Damle, T.
Huh, J.
Steinhoff, S.
Graber, L.
ADVANCES IN CRYOGENIC ENGINEERING - MATERIALS (ICMC 2019), 2020, 756
[33] Junction-to-Case Thermal Resistance Measurement and Analysis of Press-Pack IGBTs Under Double-Side Cooling Condition
Chen, Jie
Deng, Erping
Zhang, Yiming
Huang, Yongzhang
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2022, 37 (07) : 8543 - 8553
[34] Modelling the Cauer Thermal Network for Press Pack IGBTs
Li, Jinyuan
Deng, Erping
Zhao, Zhibin
Zhang, Peng
Li, Yaosheng
2017 IEEE SIXTH ASIA-PACIFIC CONFERENCE ON ANTENNAS AND PROPAGATION (APCAP), 2017,
[35] Failure Mechanism Analysis and Physics-of-Failure Lifetime Prediction Method for Press-Pack Thyristor of Converter Valve
Liang, Ning
Zhang, Zhigang
Gou, Yating
Liu, Cuicui
Yang, Zebin
Chen, Jiangnan
Zhuo, Fang
Wang, Feng
2018 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-NIIGATA 2018 -ECCE ASIA), 2018, : 1157 - 1161
[36] Reliability of contacts for press-pack high-power devices
Vobecky, J
Kolesnikov, D
MICROELECTRONICS RELIABILITY, 2005, 45 (9-11) : 1676 - 1681
[37] Reliability Study and Modelling of IGBT Press-Pack Power Modules
Long, Hong Y.
Sweet, Mark R.
Narayanan, E. M. S.
Li, Gangru
2017 THIRTY SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC), 2017, : 2711 - 2717
[38] Inductance extraction of Press-Pack IGBT by Considering Displacement Current
Li, Jinyuan
Chen, Zhongyuan
Zhang, Lei
Ni, Chouwei
Zhao, Zhibin
2018 3RD INTERNATIONAL CONFERENCE ON POWER AND RENEWABLE ENERGY (ICPRE), 2018, 64
[39] Air-Cooled Thermosyphon for Press-Pack Stack of Semiconductors
Habert, M.
Agostini, B.
7TH EUROPEAN THERMAL-SCIENCES CONFERENCE (EUROTHERM2016), 2016, 745
[40] Analysis of Press-Pack SiC MOEFET'S Parasitic Resistance
Yan, Rui
Chen, Min
Zhu, Nan
Xu, Dehong
2018 IEEE INTERNATIONAL POWER ELECTRONICS AND APPLICATION CONFERENCE AND EXPOSITION (PEAC), 2018, : 1919 - 1924

← 1 2 3 4 5 →