Carbon nanotube single-electron transistors at room temperature

被引:981
|
作者
Postma, HWC
Teepen, T
Yao, Z
Grifoni, M
Dekker, C
机构
[1] Delft Univ Technol, Dept Appl Phys, NL-2628 CJ Delft, Netherlands
[2] Delft Univ Technol, DIMES, NL-2628 CJ Delft, Netherlands
关键词
D O I
10.1126/science.1061797
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Room-temperature single-electron transistors are realized within individual metallic single-wall carbon nanotube molecules. The devices feature a short (down to similar to 20 nanometers) nanotube section that is created by inducing Local barriers into the tube with an atomic force microscope. Coulomb charging is observed at room temperature, with an addition energy of 120 millielectron volts, which substantially exceeds the thermal energy. At Low temperatures, we resolve the quantum energy Levels corresponding to the small island. We observe unconventional power-law dependencies in the measured transport properties for which we suggest a resonant tunneling Luttinger-liquid mechanism.
引用
收藏
页码:76 / 79
页数:4
相关论文
共 50 条
  • [21] Integrated Circuits Composed of Nanowire and Single-Electron Transistors Operating at Room Temperature
    Mizutani, Tomoko
    Takeuchi, Kiyoshi
    Saraya, Takuya
    Kobayashi, Masaharu
    Hiramoto, Toshiro
    2020 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), 2020, : 33 - 34
  • [22] Fabrication technique for carbon nanotube single-electron transistors using focused ion beam
    Kurokawa, Y
    Ohno, Y
    Kishimoto, S
    Okazaki, T
    Shinohara, H
    Mizutani, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (8A): : 5669 - 5670
  • [23] Fabrication technique for carbon nanotube single-electron transistors using focused ion beam
    Kurokawa, Y. (y_kuroka@echo.nuee.nagoya-u.ac.jp), 1600, Japan Society of Applied Physics (43):
  • [24] Room temperature molecular single-electron transistor
    Soldatov, ES
    Khanin, VV
    Trifonov, AS
    Gubin, SP
    Kolesov, VV
    Presnov, DE
    Iakovenko, SA
    Khomutov, GB
    Korotkov, AN
    USPEKHI FIZICHESKIKH NAUK, 1998, 168 (02): : 217 - 219
  • [25] Single-electron transistors
    Hadley, P
    Lientschnig, G
    Lai, MJ
    COMPOUND SEMICONDUCTORS 2002, 2003, 174 : 125 - 132
  • [26] Room-temperature single-electron memory
    Yano, Kazuo, 1628, IEEE, Piscataway, NJ, United States (41):
  • [27] ROOM-TEMPERATURE SINGLE-ELECTRON MEMORY
    YANO, K
    ISHII, T
    HASHIMOTO, T
    KOBAYASHI, T
    MURAI, F
    SEKI, K
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (09) : 1628 - 1638
  • [28] Single-electron transistors
    Devoret, M
    Glattli, C
    PHYSICS WORLD, 1998, 11 (09) : 29 - 33
  • [29] Room-temperature single-electron junction
    Facci, P
    Erokhin, V
    Carrara, S
    Nicolini, C
    PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 1996, 93 (20) : 10556 - 10559
  • [30] Synchronous single-electron transfer at room temperature
    Yano, K
    Ishii, T
    Sano, T
    Mine, T
    Murai, F
    Seki, K
    QUANTUM COHERENCE AND DECOHERENCE: FOUNDATIONS OF QUANTUM MECHANICS IN THE LIGHT OF NEW TECHNOLOGY, 1996, : 131 - 134