Multiple excitation process in deep-ultraviolet emission from AlGdN thin films pumped by an electron beam

被引：4

作者：

Iwahashi, Shinya ^{[1
]}

Kishi, Naohiro ^{[1
]}

Kitayama, Shinya ^{[1
]}

Kita, Takashi ^{[1
]}

Chigi, Yoshitaka ^{[2
]}

Nishimoto, Tetsuro ^{[2
]}

Tanaka, Hiroyuki ^{[2
]}

Kobayashi, Mikihiro ^{[2
]}

Ishihara, Tsuguo ^{[3
]}

Izumi, Hirokazu ^{[3
]}

机构：

[1] Kobe Univ, Dept Elect & Elect Engn, Grad Sch Engn, Nada Ku, Kobe, Hyogo 6578501, Japan

[2] YUMEX INC, Himeji, Hyogo 6712114, Japan

[3] Hyogo Prefectural Inst Technol, Suma Ku, Kobe, Hyogo 6540037, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 08期

关键词：

NM;

D O I：

10.1063/1.4705416

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the deep-ultraviolet emission properties of Al0.999Gd0.001 N thin films pumped by an electron beam. The Al0.999Gd0.001 N thin films were grown on fused silica substrates using an ultra-pure reactive sputtering technique. The intra-orbital electron transition of the Gd3+ ions in Al0.999Gd0.001 N showed an extremely narrow luminescence line at 318 nm. We fabricated field-emission devices using an Al0.999Gd0.001 N phosphor thin film and analyzed the dependence of the device characteristics on the injected current and acceleration voltage. The maximum output power was 1.0 mW/cm(2). The excitation cross section was of the order of 10(-13) cm(2) and was found to depend on the acceleration voltage. These results indicate that injected high-energy electrons multiply excite Gd3+ ion. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4705416]

引用

页数：4

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