Study on Gate Characteristics and Drive Circuit for 300A/1200V Insulated Gate Bipolar Transistors

被引：0

作者：

Babu, C. Rangesh ^{[1
]}

Narayanan, G. ^{[2
]}

机构：

[1] Medha Servo Drives Pvt ltd, Cheriapally 500051, Kerala, India

[2] Indian Inst Sci, Dept Elect Engn, Bangalore 560012, Karnataka, India

来源：

2014 IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, COMPUTING AND COMMUNICATION TECHNOLOGIES (IEEE CONECCT) | 2014年

关键词：

gate characteristics; gate drive circuit; insulated gate bipolar transistor (IGBT); parasitic inductance; power electronics; power semiconductor device; protection; switching characteristics; turn-off bias voltage;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

This paper presents the design and testing of a gate drive circuit for two parallel-connected 300A/1200V insulated gate bipolar transistors (IGBTs), meant for a 200-kVA voltage source converter. The drive circuit is tested under normal as well as fault conditions. The drive circuit performance is shown to be affected by the parasitic inductance in the gate circuitry. A procedure for estimating the equivalent gate inductance based on the measured switching characteristics is presented. The dependence of the Miller plateau voltage in the gate characteristics on the gate resistance and the magnitude of current switched is studied experimentally. The effect of off-state gate voltage on the switching characteristics is also studied experimentally. A procedure to determine the safe minimum negative-bias gate voltage is indicated.

引用

页数：6

共 50 条

[41] Integrated SOI Gate Driver for 1200V SiC-FET switches
Vogler, Bastian
Herzer, Reinhard
Mayya, Iyead
Buetow, Sven
2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2016, : 447 - 450
[42] Fabrication of Medium Power Insulated Gate Bipolar Transistors Using 300 mm Magnetic Czochralski Silicon Wafers
Schulze, Hans-Joachim
Oefner, Helmut
Niedernostheide, Franz-Josef
Luekermann, Florian
Schulz, Andreas
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2019, 216 (17):
[43] 600V insulated-gate bipolar transistor with a trench MOS gate structure
Harada, Masana
Minato, Tadaharu
Mitsubishi Electric Advance, 1994, 66 : 17 - 19
[44] LATERAL INSULATED GATE TRANSISTORS WITH IMPROVED LATCHING CHARACTERISTICS.
Robinson, Andrew L.
Pattanayak, Deva N.
Adler, Michael S.
Baliga, B.Jayant
Wildi, Eric J.
Electron device letters, 1986, EDL-7 (02): : 61 - 63
[45] A Coupled Circuit-Ambipolar Diffusion Equation Model and Its Solution Methodology for Insulated Gate Bipolar Transistors
Chen, Jiajia
Yang, Jiaqiang
Yang, Shiyou
Li, Xingjian
IEEE TRANSACTIONS ON MAGNETICS, 2017, 53 (06)
[46] A Coupled Circuit-Ambipolar Diffusion Equation Model and its Solution Methodology for Insulated Gate Bipolar Transistors
Chen, Jiajia
Yang, Shiyou
2016 IEEE CONFERENCE ON ELECTROMAGNETIC FIELD COMPUTATION (CEFC), 2016,
[47] EFFECT OF NEUTRONS ON THE CHARACTERISTICS OF THE INSULATED GATE BIPOLAR TRANSISTOR (IGBT).
Hefner, A.R.
Blackburn, D.L.
Galloway, K.F.
IEEE Transactions on Nuclear Science, 1986, NS-33 (06)
[48] Experimental Investigation on Switching Characteristics of High-Current Insulated Gate Bipolar Transistors at Low Currents
Guha, Anirudh
Datta, Aniket
Babu, C. Rangesh
Narayanan, G.
PROCEEDINGS OF THE 2014 IEEE 2ND INTERNATIONAL CONFERENCE ON ELECTRICAL ENERGY SYSTEMS (ICEES), 2014, : 171 - 176
[49] Examination of punch-through insulated gate bipolar transistors under positive and negative gate bias stress
Maïga, CO
Tala-Ighil, B
Toutah, H
Boudart, B
ISIE 2005: Proceedings of the IEEE International Symposium on Industrial Electronics 2005, Vols 1- 4, 2005, : 435 - 440
[50] Optimization of the pressure distribution in press-pack insulated gate bipolar transistors
Z. L. Huang
T. G. Yang
C. B Li
J. Zheng
W. X He
Structural and Multidisciplinary Optimization, 2021, 63 : 855 - 865

← 1 2 3 4 5 →