A Coupled Circuit-Ambipolar Diffusion Equation Model and its Solution Methodology for Insulated Gate Bipolar Transistors

被引：0
|
作者：
Chen, Jiajia [1 ]
Yang, Shiyou [1 ]
机构：
[1] Zhejiang Univ, Coll Elect Engn, Hangzhou, Zhejiang, Peoples R China
来源：
2016 IEEE CONFERENCE ON ELECTROMAGNETIC FIELD COMPUTATION (CEFC) | 2016年
关键词：
Ambipolar diffusion equation; insulated gate bipolar transistor; transient behavior;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
To eliminate the inaccuracy of existing models and methods in predicting the transients of an insulated gate bipolar transistor in an arbitrary free-carrier injection condition, a coupled circuit-ambipolar diffusion equation model and its numerical solution methodology are proposed. The accuracy of the proposed model is validated by comparisons of the computed and tested results.
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页数：1
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