A Coupled Circuit-Ambipolar Diffusion Equation Model and its Solution Methodology for Insulated Gate Bipolar Transistors

被引：0

作者：

Chen, Jiajia ^{[1
]}

Yang, Shiyou ^{[1
]}

机构：

[1] Zhejiang Univ, Coll Elect Engn, Hangzhou, Zhejiang, Peoples R China

来源：

2016 IEEE CONFERENCE ON ELECTROMAGNETIC FIELD COMPUTATION (CEFC) | 2016年

关键词：

Ambipolar diffusion equation; insulated gate bipolar transistor; transient behavior;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

To eliminate the inaccuracy of existing models and methods in predicting the transients of an insulated gate bipolar transistor in an arbitrary free-carrier injection condition, a coupled circuit-ambipolar diffusion equation model and its numerical solution methodology are proposed. The accuracy of the proposed model is validated by comparisons of the computed and tested results.

引用

页数：1