Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment

被引：24

作者：

Zhang, X. ^{[2
,3
]}

Dubrovskii, V. G. ^{[1
,3
]}

Sibirev, N. V. ^{[3
]}

Cirlin, G. E. ^{[1
,3
,4
]}

Sartel, C. ^{[4
]}

Tchernycheva, M. ^{[5
]}

Harmand, J. C. ^{[4
]}

Glas, F. ^{[4
]}

机构：

[1] Ioffe Phys Tech Inst RAS, St Petersburg 194021, Russia

[2] Beijing Univ Posts & Telecommun, Key Lab Informat Photon & Opt Commun, Minist Educ, Beijing 100876, Peoples R China

[3] St Petersburg Acad Univ RAS, St Petersburg 194021, Russia

[4] CNRS LPN, F-91460 Marcoussis, France

[5] CNRS, Dept OptoGaN, Inst Elect Fondamentale, UMR 8622, F-91405 Orsay, France

来源：

NANOSCALE RESEARCH LETTERS | 2010年 / 5卷 / 10期

基金：

俄罗斯基础研究基金会;

关键词：

Inclined GaAs nanowires; Molecular beam epitaxy; Surface diffusion; STACKING-FAULTS; SEMICONDUCTOR; HETEROSTRUCTURES; DIFFUSION; MODEL;

D O I：

10.1007/s11671-010-9698-7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The growth of inclined GaAs nanowires (NWs) during molecular beam epitaxy (MBE) on the rotating substrates is studied. The growth model provides explicitly the NW length as a function of radius, supersaturations, diffusion lengths and the tilt angle. Growth experiments are carried out on the GaAs(211)A and GaAs(111)B substrates. It is found that 20A degrees inclined NWs are two times longer in average, which is explained by a larger impingement rate on their sidewalls. We find that the effective diffusion length at 550A degrees C amounts to 12 nm for the surface adatoms and is more than 5,000 nm for the sidewall adatoms. Supersaturations of surface and sidewall adatoms are also estimated. The obtained results show the importance of sidewall adatoms in the MBE growth of NWs, neglected in a number of earlier studies.

引用

页码：1692 / 1697

页数：6

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