High-resolution, low-temperature photoemission spectroscopy of Kondo semiconductor CeRhAs and related compounds

被引：2
|
作者：
Shimada, K [1 ]
Kobayashi, K
Narimura, T
Baltzer, P
Namatame, H
Taniguchi, M
Suemitsu, T
Sasakawa, T
Takabatake, T
机构：
[1] Hiroshima Univ, Hiroshima Synchrotron Radiat Ctr, Higashihiroshima 7398526, Japan
[2] Hiroshima Univ, Grad Sch Sci, Higashihiroshima 7398526, Japan
[3] Hiroshima Univ, ADSM, Dept Quantum Matter, Higashihiroshima 7398530, Japan
来源：
PHYSICA B-CONDENSED MATTER | 2003年 / 329卷
关键词：
Kondo semiconductor; photoemission spectroscopy; CeRhAs; CeRhSb;
D O I：
10.1016/S0921-4526(02)02451-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Cc 4f states of the Kondo semiconductor CeRhAs, semimetal CeRhSb, and metal CePtSn single crystals were observed directly by high-resolution resonant photoemission spectroscopy. A large gap and a pseudogap were found in CeRhAs and CeRhSb, respectively. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：576 / 577
页数：2
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