Positron annihilation lifetime and photoluminescence studies on single crystalline ZnO

被引:19
|
作者
Sarkar, A. [1 ]
Chakrabarti, Mahuya [2 ]
Ray, S. K. [3 ]
Bhowmick, D. [4 ]
Sanyal, D. [4 ]
机构
[1] Bangabasi Morning Coll, Dept Phys, Kolkata 700009, India
[2] Univ Calcutta, Dept Phys, Kolkata 700009, India
[3] Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India
[4] Ctr Variable Energy Cyclotron, Kolkata 700064, India
关键词
TEMPERATURE-DEPENDENCE; ENERGY-GAP; DEFECTS; EXCITON;
D O I
10.1088/0953-8984/23/15/155801
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The room temperature positron annihilation lifetime for single crystalline ZnO has been measured as 164 +/- 1 ps. The single component lifetime value is very close to but higher than the theoretically predicted value of similar to 154 ps. Photoluminescence study ( at 10 K) indicates the presence of hydrogen and other defects, mainly acceptor related, in the crystal. Defects related to a lower open volume than zinc vacancies, presumably a complex with two hydrogen atoms, are the major trapping sites in the sample. The bulk positron lifetime in ZnO is expected to be a little less than 164 ps.
引用
收藏
页数:5
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