Positron annihilation lifetime and photoluminescence studies on single crystalline ZnO

被引：19

作者：

Sarkar, A. ^{[1
]}

Chakrabarti, Mahuya ^{[2
]}

Ray, S. K. ^{[3
]}

Bhowmick, D. ^{[4
]}

Sanyal, D. ^{[4
]}

机构：

[1] Bangabasi Morning Coll, Dept Phys, Kolkata 700009, India

[2] Univ Calcutta, Dept Phys, Kolkata 700009, India

[3] Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India

[4] Ctr Variable Energy Cyclotron, Kolkata 700064, India

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2011年 / 23卷 / 15期

关键词：

TEMPERATURE-DEPENDENCE; ENERGY-GAP; DEFECTS; EXCITON;

D O I：

10.1088/0953-8984/23/15/155801

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The room temperature positron annihilation lifetime for single crystalline ZnO has been measured as 164 +/- 1 ps. The single component lifetime value is very close to but higher than the theoretically predicted value of similar to 154 ps. Photoluminescence study ( at 10 K) indicates the presence of hydrogen and other defects, mainly acceptor related, in the crystal. Defects related to a lower open volume than zinc vacancies, presumably a complex with two hydrogen atoms, are the major trapping sites in the sample. The bulk positron lifetime in ZnO is expected to be a little less than 164 ps.

引用

页数：5

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