Improved diamond surfaces following lift-off and plasma treatments as observed by x-ray absorption spectroscopy

被引：13

作者：

Stacey, Alastair ^{[1
]}

Drumm, Virginia S. ^{[1
]}

Fairchild, Barbara A. ^{[1
]}

Ganesan, Kumar ^{[1
]}

Rubanov, Sergey ^{[2
]}

Kalish, Rafi ^{[3
,4
]}

Cowie, Bruce C. C. ^{[5
]}

Prawer, Steven ^{[1
]}

Hoffman, Alon ^{[6
]}

机构：

[1] Univ Melbourne, Sch Phys, Melbourne, Vic 3010, Australia

[2] Univ Melbourne, Inst Bio21, Electron Microscopy Unit, Melbourne, Vic 3010, Australia

[3] Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel

[4] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel

[5] Australian Synchrotron, Clayton, Vic 3168, Australia

[6] Technion Israel Inst Technol, Schulich Fac Chem, IL-32000 Haifa, Israel

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 18期

基金：

澳大利亚研究理事会;

关键词：

SINGLE-CRYSTAL DIAMOND; CVD-DIAMOND; ION; DAMAGE; FILMS; EDGE;

D O I：

10.1063/1.3585106

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the nature of the residual damage in diamond crystals following the ion implantation/graphitization "lift-off" process, using near-edge x-ray absorption fine structure spectroscopy and transmission electron microscopy. A defective but crystalline interface is found, which displays dense pre-edge unoccupied states and an almost complete loss of the core-level C 1s exciton signature. This residual crystalline damage is resistant to standard chemical etching, however a hydrogen plasma treatment is found to completely recover a pristine diamond surface. Analysis and removal of residual ion-induced damage is considered crucial to the performance of many diamond device architectures. (C) 2011 American Institute of Physics. [doi:10.1063/1.3585106]

引用

页数：3

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