On the formation of positive charges in ultrathin silicon-oxynitride p-MOSFETs subjected to negative bias temperature stress

被引：0
|
作者：
Wang, Yangang [1 ]
机构：
[1] Liverpool John Moores Univ, Sch Engn, Liverpool L3 3AF, Merseyside, England
来源：
IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 03期
关键词：
degradation; hole traps; interface state; negative bias temperature instability (NBTI); oxynitride; positive charge (PC); recovery;
D O I：
10.1109/LED.2008.915570
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
p-MOSFET negative bias temperature instability (NBTI) has become the most important reliability issue for the CMOS industry. This letter investigates the formation of oxide positive charges (PCs) and its effects on the NBTI. Evidence shows that PC dominates NBTI at stress temperature lower than 373 K, whereas interface-state generation has an obvious contribution above 373 K. Two kinds of PC are distinguished as follows: The trapped holes are the main origin of NBTI at lower temperatures, and the generated PC plays a role at higher temperatures. The physical mechanisms of the two kinds of PC are also discussed in this letter.
引用
收藏
页码：269 / 272
页数：4
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