Doping in 2D

被引：5
|
作者：
不详
机构：
来源：
NATURE ELECTRONICS | 2021年 / 4卷 / 10期
关键词：
2;
D O I：
10.1038/s41928-021-00668-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ion implantation can be used to dope silicon devices, but can be problematic when applied to the atomically thin crystal structure of two-dimensional materials — an increasing range of alternative methods is though available.
引用
收藏
页码：699 / 699
页数：1
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