Good ferroelectricity of Pb(Zr,Ti)O3 thin films fabricated by highly reproducible deposition on bottom Ir electrode at 395°C (vol 42, pg 1085, 2003)

被引：0
|
作者：
Asano, G
Oikawa, T
Funakubo, H
Saito, K
机构：
[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[2] PANalyt Applicat Lab, Minato Ku, Tokyo 1050013, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2003年 / 42卷 / 11A期
关键词：
D O I：
10.1143/JJAP.42.L1346
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L1346 / L1346
页数：1
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