High brightness visible (660 nm) resonant-cavity light-emitting diode

被引：56
|
作者：
Streubel, K [1 ]
Helin, U [1 ]
Oskarsson, V [1 ]
Backlin, E [1 ]
Johansson, A [1 ]
机构：
[1] Mitel Semicond AB, S-17526 Jarfalla, Sweden
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 12期
关键词：
Fabry-Perot resonators; light-emitting diode; light source; optical communication; optical resonance;
D O I：
10.1109/68.730469
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Visible (660 nm) resonant-cavity light-emitting diodes (RCLED's) have been fabricated. The top-emitting, planar devices employed two AlGaAs-AlAs-Bragg mirrors and GaInP-AlGaInP quantum-well active layers. The device performance was characterized as ai function of the device diameters, ranging from 24 to 202 mu m. The larger devices exhibited a nearly linear increase of output power with injected current with 8,4-mW emission at 120 mA, A maximum external efficiency of 4.8% was measured at 4 mA on the 84-mu m aperture devices. All devices exhibited a narrow emission at 659-661 nm with a linewidth around 3 nm, The results show that RCLED's are promising low-cost light sources for plastic fiber transmission as well as display applications.
引用
收藏
页码：1685 / 1687
页数：3
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