High brightness visible (660 nm) resonant-cavity light-emitting diode

被引：56

作者：

Streubel, K ^{[1
]}

Helin, U ^{[1
]}

Oskarsson, V ^{[1
]}

Backlin, E ^{[1
]}

Johansson, A ^{[1
]}

机构：

[1] Mitel Semicond AB, S-17526 Jarfalla, Sweden

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 12期

关键词：

Fabry-Perot resonators; light-emitting diode; light source; optical communication; optical resonance;

D O I：

10.1109/68.730469

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Visible (660 nm) resonant-cavity light-emitting diodes (RCLED's) have been fabricated. The top-emitting, planar devices employed two AlGaAs-AlAs-Bragg mirrors and GaInP-AlGaInP quantum-well active layers. The device performance was characterized as ai function of the device diameters, ranging from 24 to 202 mu m. The larger devices exhibited a nearly linear increase of output power with injected current with 8,4-mW emission at 120 mA, A maximum external efficiency of 4.8% was measured at 4 mA on the 84-mu m aperture devices. All devices exhibited a narrow emission at 659-661 nm with a linewidth around 3 nm, The results show that RCLED's are promising low-cost light sources for plastic fiber transmission as well as display applications.

引用

页码：1685 / 1687

页数：3

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