Modeling and Optimization of Smoothly Tapered Junction Termination Extension for High-Voltage SiC BJTs and Thyristors by Simulation

被引：1

作者：

Long, Hu ^{[1
,2
]}

Huang, Linyang ^{[1
,2
]}

Shao, Fangge ^{[1
,2
]}

Ren, Na ^{[1
,2
]}

Sheng, Kuang ^{[1
,2
]}

机构：

[1] Zhejiang Univ, Coll Elect Engn, Hangzhou 310027, Peoples R China

[2] Zhejiang Univ, ZJU Hangzhou Global Sci & Technol Innovat Ctr, Hangzhou 311215, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 03期

关键词：

Silicon carbide; Junctions; Thyristors; Doping; Semiconductor process modeling; Optimization; Impact ionization; Edge termination; high voltage; power devices; silicon carbide (SiC); PIN DIODES; 1 CM(2); KV; DESIGN; TRENCH;

D O I：

10.1109/TED.2021.3130855

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Based on a newly proposed edge termination technique on silicon carbide (SiC) device named aperture density modulation (ADM), this article investigates the optimization strategy of a family of termination structures derived from it. Using both analytical modeling and numerical simulation, this article demonstrates the capability of achieving 15-kV breakdown voltage with a termination length of 160-240 mu in theory. Besides, the fabrication feasibility with profile customizability is also demonstrated in experiments while still keeping a low process cost.

引用

页码：1169 / 1175

页数：7

共 50 条

[31] dV/dt effect in high-voltage 4H-SiC thyristors
Levinshtein, ME
Ivanov, PA
Mnatsakanov, TT
Yurkov, SN
Agarwal, AK
Palmour, JW
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (08) : 793 - 795
[32] Single-Mask Implantation-Free Technique Based on Aperture Density Modulation for Termination in High-Voltage SiC Thyristors
Long, Hu
Xu, Hongyi
Wang, Hengyu
Ren, Na
Guo, Qing
Sheng, Kuang
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (03) : 1181 - 1184
[33] 4H-SiC Diode Avalanche Breakdown Voltage Estimation by Simulation and Junction Termination Extension Analysis
Rong, Hua
Sharma, Yogesh
Li, Fan
Jennings, Mike
Mawby, Phil
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 824 - 827
[34] Turn-ON of High-Voltage SiC Thyristors for Fast-Switching Applications
O'Brien, Heather K.
Ogunniyi, Aderinto A.
Shaheen, William
Ryu, Sei-Hyung
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2016, 4 (03) : 772 - 779
[35] DESIGN AND OPTIMIZATION OF LINEARLY GRADED FIELD LIMITING RING TERMINATION FOR HIGH-VOLTAGE SIC DIODES
Deng, Xiaochuan
Wen, Yi
Wang, Xiangdong
Wang, Yongwei
Wang, Yong
Yang, Fei
Wu, Hao
Zhang, Bo
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
[36] An effective high-voltage termination for SiC planar pn junctions for use in high-voltage devices and UV detectors
Brezeanu, G
Badila, M
Godignon, P
Millan, J
Udrea, F
Mihaila, A
Amaratunga, G
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1301 - 1304
[37] NiO junction termination extension for high-voltage (>3 kV) Ga2O3 devices
Xiao, Ming
Wang, Boyan
Spencer, Joseph
Qin, Yuan
Porter, Matthew
Ma, Yunwei
Wang, Yifan
Sasaki, Kohei
Tadjer, Marko
Zhang, Yuhao
APPLIED PHYSICS LETTERS, 2023, 122 (18)
[38] Numerical simulation on high-voltage multiple-zone junction termination extension(MZ-JTE) by using boundary element method (BEM)
Liang, Sujun, 1600, (21):
[39] An effective high-voltage termination for SiC planar pn junctions for use in high-voltage devices and UV detectors
(Trans Tech Publications Ltd): : 389 - 393
[40] High voltage SiC JBS diodes with multiple zone junction termination extension using single etching step
Deng, Xiaochuan
Rao, Chengyuan
Wei, Jin
Jiang, Huaping
Chen, Miaomiao
Wang, Xiangdong
Zhang, Bo
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 808 - 811

← 1 2 3 4 5 →