Memristor modeling: challenges in theories, simulations, and device variability

被引：108
|
作者：
Gao, Lili [1 ,5 ]
Ren, Qingying [2 ,3 ]
Sun, Jiawei [4 ]
Han, Su-Ting [1 ]
Zhou, Ye [5 ]
机构：
[1] Shenzhen Univ, Inst Microscale Optoelect, Shenzhen 518060, Peoples R China
[2] Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing, Peoples R China
[3] Nanjing Univ Posts & Telecommun, Coll Microelect, Nanjing, Peoples R China
[4] Suzhou Univ Sci & Technol, Coll Elect & Informat Engn, Suzhou, Peoples R China
[5] Shenzhen Univ, Inst Adv Study, Shenzhen 518060, Peoples R China
来源：
JOURNAL OF MATERIALS CHEMISTRY C | 2021年 / 9卷 / 47期
基金：
中国国家自然科学基金;
关键词：
RANDOM-ACCESS MEMORY; RESISTIVE-SWITCHING MEMORY; PHASE-CHANGE MATERIALS; AB-INITIO; CONDUCTIVE FILAMENTS; 2ND-ORDER MEMRISTOR; COMPACT MODEL; SPICE MODEL; PART I; RESISTANCE;
D O I：
10.1039/d1tc04201g
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This article presents a review of the current development and challenges in memristor modeling. We review the mechanisms of memristive devices based on various classifications and survey the progress of memristive models and simulations. Besides the classical theoretical models, different modeling architectures are compared, including first-principles, modular dynamics and finite element tools such as COMSOL and MATLAB. The challenges and strategies for memristors with non-ideal mechanisms, including large parameter variations, modeling algorithms and simulation roadblocks are also discussed.
引用
收藏
页码：16859 / 16884
页数：26
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