All-solution-processed, flexible thin-film transistor based on PANI/PETA as gate/gate insulator (vol 5, pg 105785, 2015)

被引：1
|
作者：
Hong, Jin-Yong [1 ]
Shin, Kyoung-Hwan [2 ]
Yoon, Dai Gun [3 ]
Chin, Byung Doo [3 ]
Kim, Sung Hyun [4 ]
机构：
[1] MIT, Dept Elect Engn & Comp Sci, 77 Massachusetts Ave, Cambridge, MA 02139 USA
[2] Seoul Natl Univ, Sch Chem & Biol Engn, Seoul 151747, South Korea
[3] Dankook Univ, Dept Polymer Sci & Engn, Yongin 448701, South Korea
[4] Seoul Natl Univ, Coll Nat Sci, Dept Chem, Seoul 151747, South Korea
来源：
RSC ADVANCES | 2019年 / 9卷 / 07期
关键词：
D O I：
10.1039/c8ra90105h
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Correction for 'All-solution-processed, flexible thin-film transistor based on PANI/PETA as gate/gate insulator' by Jin-Yong Hong et al., RSC Adv., 2015, 5, 105785-105788.
引用
收藏
页码：3856 / 3856
页数：1
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