Highly smooth and conductive silver film with metallo-organic decomposition ink for all-solution-processed flexible organic thin-film transistors

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作者
Yingtao Xie
Shihong Ouyang
Dongping Wang
Wen-Ya Lee
Hon Hang Fong
机构
[1] Chongqing University of Posts and Telecommunications,Department of Electronic Engineering
[2] Shanghai Jiao Tong University,Department of Electronic Engineering
[3] National Taipei University of Technology,Department of Chemical Engineering and Biotechnology, Research and Development Center for Smart Textile Technology
[4] Tianjin University,Department of Chemical Engineering
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摘要
A facile silver metallo-organic decomposition (MOD) ink and its two-step sintering process was developed to fabricate highly conductive and smooth silver film for the flexible organic electronics. Using simple and feasible two-step sintering processes and double-layer processes, the conductivity of silver film with the facile MOD ink was greatly improved from 2.85 × 103 S cm−1 to 1.50 × 105 S cm−1, indicating about 53 times increase and about 24% bulk silver conductivity, and the surface RMS roughness was about 6 nm by atomic force microscope, nearly identical to the thermal-evaporated silver film. The XRD showed that synthesized silver thin films were composed of pure silver and well crystallized to the face-centered cubic structure, similar to metallic silver. And the full XPS spectra showed the presence of the same elements and almost identical peaks of solution-processed silver, as compared to the thermal silver surface elemental data. Besides, the silver film also demonstrated great mechanical stability and adhesion on PET substrate. At last, using silver gate/source/drain electrodes generated from the MOD ink, the all-solution-processed organic thin-film transistors (OTFTs) were demonstrated. The optimized OTFTs exhibited a high field mobility of 0.36 cm2 V−1 s−1 with threshold voltage of 0.35 V and on/off current ratio of 1 × 105.
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页码:15908 / 15918
页数:10
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