Blue InGaN light-emitting diodes with dip-shaped quantum wells

被引：19

作者：

Lu Tai-Ping ^{[1
]}

Li Shu-Ti ^{[1
]}

Zhang Kang ^{[1
]}

Liu Chao ^{[1
]}

Xiao Guo-Wei ^{[2
]}

Zhou Yu-Gang ^{[2
]}

Zheng Shu-Wen ^{[1
]}

Yin Yi-An ^{[1
]}

Wu Le-Juan ^{[1
]}

Wang Hai-Long ^{[1
]}

Yang Xiao-Dong ^{[1
]}

机构：

[1] S China Normal Univ, Inst Optoelect Mat & Technol, Guangzhou 510631, Guangdong, Peoples R China

[2] APT Elect Ltd, Guangzhou 511458, Guangdong, Peoples R China

来源：

CHINESE PHYSICS B | 2011年 / 20卷 / 10期

基金：

中国国家自然科学基金;

关键词：

GaN-based light-emitting diodes; dip-shaped quantum wells; PLANE GAN;

D O I：

10.1088/1674-1056/20/10/108504

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

InGaN based light-emitting diodes (LEDs) with dip-shaped quantum wells and conventional rectangular quantum wells are numerically investigated by using the APSYS simulation software. It is found that the structure with dip-shaped quantum wells shows improved light output power, lower current leakage and less efficiency droop. Based on numerical simulation and analysis, these improvements on the electrical and the optical characteristics are attributed mainly to the alleviation of the electrostatic field in dip-shaped InGaN/GaN multiple quantum wells (MQWs).

引用

页数：5

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