Photoluminescence and electroluminescence investigations at Ge-rich SiO2 layers

Strong blue and violet photo (PL) and electroluminescence (EL) at room temperature was obtained from SiO2-films grown on crystalline Si, which were either single (ST) or double implanted (DI) with Ge ions and annealed at different temperatures. The PL spectra of Ge-rich layers reach a maximum after annealing at 500-700 degrees C for DI layers or 900-1000 degrees C for SI layers, respectively. Both, PL and EL of 500 nm thick Ge-rich layers are easily visible by the naked eye at ambient light due to their high intensity. Based on excitation spectra we tentatively interpret the blue PL as due to the oxygen vacancy in silicon dioxide. The EL spectrum of the Ge-implanted oxide correlates very well with the PL one and shows a linear dependence on the injected current over three orders of magnitude. For DI layers much higher injection currents than for SI layers can be achieved. An EL efficiency in the order of 10(-4) for Ge+ -implanted silicon dioxide was determined. (C) 1999 Elsevier Science B.V. All rights reserved.