Visible photoluminescence in ion beam mixed SiO2/Si/SiO2 layers

被引：11
|
作者：
Chae, KH
Son, JH
Chang, GS
Kim, HB
Jeong, JY
Im, S
Song, JH
Kim, KJ
Kim, HK
Whang, CN [1 ]
机构：
[1] Yonsei Univ, Atom Scale Surface Sci Res Ctr, Seoul 120749, South Korea
[2] Yonsei Univ, Dept Phys, Seoul 120749, South Korea
[3] Yonsei Univ, Dept Met Engn, Seoul 120749, South Korea
[4] Korea Inst Sci & Technol, Adv Anal Ctr, Seoul 130650, South Korea
[5] Korea Res Inst Stand & Sci, Surface Anal Grp, Taejon 305600, South Korea
来源：
NANOSTRUCTURED MATERIALS | 1999年 / 11卷 / 08期
关键词：
D O I：
10.1016/S0965-9773(99)00414-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Visible photoluminescence from silicon nanocrystals embedded in SiO2 matrix by ion beam mixing was investigated. Photoluminescence spectra of ion beam mixed SiO2/Si/SiO2 films excited by an Ar-laser (457.9 nm) showed more intense luminescence with a peak centered at 720 nm than that prepared by the conventional ion implantation method. The formation of nanocrystals in SiO2 matrix was confirmed by cross-sectional high resolution transmission electron microscopy. The red luminescence is attributed to the silicon nanocrystals produced by ion beam mixing. (C) 2000 Acta Metallurgica Inc.
引用
收藏
页码：1239 / 1243
页数：5
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