Visible photoluminescence in ion beam mixed SiO2/Si/SiO2 layers

被引：11
|
作者：
Chae, KH
Son, JH
Chang, GS
Kim, HB
Jeong, JY
Im, S
Song, JH
Kim, KJ
Kim, HK
Whang, CN [1 ]
机构：
[1] Yonsei Univ, Atom Scale Surface Sci Res Ctr, Seoul 120749, South Korea
[2] Yonsei Univ, Dept Phys, Seoul 120749, South Korea
[3] Yonsei Univ, Dept Met Engn, Seoul 120749, South Korea
[4] Korea Inst Sci & Technol, Adv Anal Ctr, Seoul 130650, South Korea
[5] Korea Res Inst Stand & Sci, Surface Anal Grp, Taejon 305600, South Korea
来源：
NANOSTRUCTURED MATERIALS | 1999年 / 11卷 / 08期
关键词：
D O I：
10.1016/S0965-9773(99)00414-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Visible photoluminescence from silicon nanocrystals embedded in SiO2 matrix by ion beam mixing was investigated. Photoluminescence spectra of ion beam mixed SiO2/Si/SiO2 films excited by an Ar-laser (457.9 nm) showed more intense luminescence with a peak centered at 720 nm than that prepared by the conventional ion implantation method. The formation of nanocrystals in SiO2 matrix was confirmed by cross-sectional high resolution transmission electron microscopy. The red luminescence is attributed to the silicon nanocrystals produced by ion beam mixing. (C) 2000 Acta Metallurgica Inc.
引用
收藏
页码：1239 / 1243
页数：5
相关论文
共 50 条
  • [31] Enhanced ultraviolet photoluminescence from SiO2/Ge:SiO2/SiO2 sandwiched structure
    Shen, JK
    Wu, XL
    Yuan, RK
    Tang, N
    Zou, JP
    Mei, YF
    Tan, C
    Bao, XM
    Siu, GG
    APPLIED PHYSICS LETTERS, 2000, 77 (20) : 3134 - 3136
  • [32] SPUTTERING EFFECTS IN SI, SIO2 AND THE SI/SIO2 INTERFACE
    DOWNEY, SW
    EMERSON, AB
    SURFACE AND INTERFACE ANALYSIS, 1993, 20 (01) : 53 - 59
  • [33] Visible luminescence in Si/SiO2 superlattices
    Lockwood, DJ
    Baribeau, JM
    Grant, PD
    Labbe, HJ
    Lu, ZH
    Stapledon, J
    Sullivan, BT
    ADVANCES IN MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS - 1996, 1997, 452 : 183 - 194
  • [34] Influences of thicknesses of SiO2 layers on electroluminescence from amorphous Si/SiO2 superlattices
    Heng, CL
    Zhang, BR
    Qiao, YP
    Ma, ZC
    Zong, WH
    Qin, GG
    PHYSICA B, 1999, 270 (1-2): : 104 - 109
  • [35] Influences of thicknesses of SiO2 layers on electroluminescence from amorphous Si/SiO2 superlattices
    Heng, C.L.
    Zhang, B.R.
    Qiao, Y.P.
    Ma, Z.C.
    Zong, W.H.
    Qin, G.G.
    Physica B: Condensed Matter, 1999, 270 (1-2): : 104 - 109
  • [36] Ion beam-induced hydrogen migration in a SiO2/a-Si:H/SiO2 layer stack
    Pantchev, B.
    Danesh, P.
    Schmidt, B.
    Grambole, D.
    Moeller, W.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (03)
  • [37] Visible photoluminescence of SiO2 implanted with carbon and silicon
    Garrido, B
    Lopez, M
    Ferre, S
    RomanoRodriguez, A
    PerezRodriguez, A
    Ruterana, P
    Morante, JR
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 120 (1-4): : 101 - 105
  • [38] Visible photoluminescence from the annealed TEOS SiO2
    Xu, M
    Xu, S
    Ee, YC
    Yong, C
    Chai, JW
    Huang, SY
    Long, JD
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 128 (1-3): : 89 - 92
  • [39] Analyses of the As doping of SiO2/Si/SiO2 nanostructures
    Ruffino, Francesco
    Tomasello, Mario Vincenzo
    Miritello, Maria
    De Bastiani, Riccardo
    Nicotra, Giuseppe
    Spinella, Corrado
    Grimaldi, Maria Grazia
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 3, 2011, 8 (03): : 863 - 866
  • [40] Atomic structure of SiO2 at SiO2/Si interfaces
    Hirose, K
    Nohira, H
    Sakano, K
    Hattori, T
    APPLIED SURFACE SCIENCE, 2000, 166 (1-4) : 455 - 459
12345