Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach

被引：33
|
作者：
Pinacho, R [1 ]
Jaraiz, M [1 ]
Castrillo, P [1 ]
Martin-Bragado, I [1 ]
Rubio, JE [1 ]
Barbolla, J [1 ]
机构：
[1] Univ Valladolid, Dept Elect, E-47011 Valladolid, Spain
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 25期
关键词：
D O I：
10.1063/1.1948533
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A comprehensive atomistic model for arsenic in silicon which includes charge effects and is consistent with first-principles calculations for arsenic-vacancy cluster energies has been developed. Emphasis has been put in reproducing the electrical deactivation and the annealed profiles in preamorphized silicon. The simulations performed with an atomistic kinetic Monte Carlo simulator suggest a predominant role of the mobile interstitial arsenic in deactivation experiments and provide a good understanding of the arsenic behavior in preamorphized silicon during annealing. (c) 2005 American Institute of Physics.
引用
收藏
页码：1 / 3
页数：3
相关论文
共 50 条
  • [1] Mobility and stability of large vacancy and vacancy-copper clusters in iron: An atomistic kinetic Monte Carlo study
    Castin, N.
    Pascuet, M. I.
    Malerba, L.
    JOURNAL OF NUCLEAR MATERIALS, 2012, 429 (1-3) : 315 - 324
  • [2] Atomistic Modeling of Pocket Dopant Deactivation and Its Impact on Vth Variation in Scaled Si Planar Devices Using an Atomistic Kinetic Monte Carlo Approach
    Noda, Taiji
    Vrancken, Christa
    Vandervorst, Wilfried
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (06) : 1789 - 1795
  • [3] Stability and mobility of small vacancy and copper-vacancy clusters in bcc-Fe: An atomistic kinetic Monte Carlo study
    Djurabekova, F. G.
    Malerba, L.
    Domain, C.
    Becquart, C. S.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 255 (01): : 47 - 51
  • [4] Modeling the first stages of Cu precipitation in α-Fe using a hybrid atomistic kinetic Monte Carlo approach
    Castin, N.
    Pascuet, M. I.
    Malerba, L.
    JOURNAL OF CHEMICAL PHYSICS, 2011, 135 (06):
  • [5] Arsenic deactivation in Si: Electronic structure and charge states of vacancy-impurity clusters
    Mueller, DC
    Alonso, E
    Fichtner, W
    PHYSICAL REVIEW B, 2003, 68 (04)
  • [6] Physically based kinetic Monte Carlo modeling of arsenic-interstitial interaction and arsenic uphill diffusion during ultrashallow junction formation
    Kong, Ning
    Kirichenko, Taras A.
    Kim, Yonghyun
    Foisy, Mark C.
    Banerjee, Sanjay K.
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (01)
  • [7] Physically based kinetic Monte Carlo modeling of arsenic-interstitial interaction and arsenic uphill diffusion during ultrashallow junction formation
    Kong, Ning
    Kirichenko, Taras A.
    Kim, Yonghyun
    Foisy, Mark C.
    Banerjee, Sanjay K.
    Journal of Applied Physics, 2008, 104 (01):
  • [8] Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations
    Rubio, JE
    Jaraiz, M
    Martin-Bragado, I
    Castrillo, P
    Pinacho, R
    Barbolla, J
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 124 : 392 - 396
  • [9] Analysis of Pocket Profile Deactivation and its Impact on Vth variation for Laser Annealed Device using an Atomistic Kinetic Monte Carlo Approach
    Noda, T.
    Vandervorst, W.
    Vrancken, C.
    Ortolland, C.
    Rosseel, E.
    Eyben, P.
    Absil, P. P.
    Biesemans, S.
    Hoffmann, T. Y.
    2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST, 2010,
  • [10] Arsenic removal through electrocoagulation: Kinetic and statistical modeling
    Balasubramanian, N.
    Kojima, Toshinori
    Srinivasakannan, C.
    CHEMICAL ENGINEERING JOURNAL, 2009, 155 (1-2) : 76 - 82
12345