Atomistic Modeling of Pocket Dopant Deactivation and Its Impact on Vth Variation in Scaled Si Planar Devices Using an Atomistic Kinetic Monte Carlo Approach

被引：0
|
作者：
Noda, Taiji [1 ]
Vrancken, Christa [2 ]
Vandervorst, Wilfried [2 ,3 ]
机构：
[1] Panasonic Corp, Osaka 5406233, Japan
[2] IMEC, B-3001 Leuven, Belgium
[3] Katholieke Univ Leuven, B-3001 Leuven, Belgium
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 06期
关键词：
Diffusion; kinetic Monte Carlo (KMC); MOSFETs; semiconductor; ultrashallow junctions (US[!text type='Js']Js[!/text]); V-th variation; ENHANCED DIFFUSION; SILICON; TECHNOLOGIES; TRANSISTORS; EVOLUTION; BORON;
D O I：
10.1109/TED.2015.2419876
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analysis of pocket dopant deactivation and its impact on V-th variation for scaled Si devices using an atomistic kinetic Monte Carlo approach are shown in this paper. B 5 keV, 5 x 10(13)/cm(2) + As 1 keV, 1 x 10(15)/cm(2) implants were used for B pocket deactivation study. An effect of laser annealing (LA) before spike-Rapid Thermal Annealing (RTA) was investigated. In case of B pocket implant, a stable B cluster configuration is changed from B3I (>1020 degrees C) to BI2 at spike-RTA temperature similar to 1020 degrees C. BI2 is a source of B pocket deactivation with lower temperature than 1020 degrees C. LA before low-temperature spike-RTA (<1020 degrees C) is useful to improve B pocket activation. The Vth mismatch figure of merit extracted from Pelgrom plot (Avt) degradation in nFET is shown as spike-RTA temperature is reduced. LA before spike-RTA shows a better short channel effect with lower drain-induced barrier lowering in nFET. LA + spike-RTA at 1000 degrees C shows better Avt than spike-RTA-only. The difference of pocket deactivation is one of possible important reasons for the higher Vth mismatch for nFET than for pFET.
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收藏
页码：1789 / 1795
页数：7
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