Atomistic process modeling based on Kinetic Monte Carlo and Molecular Dynamics for optimization of advanced devices

被引：0

作者：

Pelaz, L. ^{[1
]}

Marques, L. ^{[1
]}

Aboy, M. ^{[1
]}

Lopez, P. ^{[1
]}

Santos, I. ^{[1
]}

Duffy, R. ^{[2
]}

机构：

[1] Univ Valladolid, Valladolid, Spain

[2] Tyndall Natl Inst, Cork, Ireland

来源：

2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING | 2009年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Combined Molecular Dynamics and Kinetic Monte Carlo simulations are used in hierarchical models to gain physical understanding for process optimization in advanced devices. Thermal budget for the removal of defects in advanced millisecond anneals is evaluated. Alternatives to overcome the imperfect regrowth of narrow Si structures are proposed. The compromise between implant and anneal parameters for doping of FinFETs are presented, considering lateral diffusion and activation.

引用

页码：479 / +

页数：2

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