Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach

被引：33

作者：

Pinacho, R ^{[1
]}

Jaraiz, M ^{[1
]}

Castrillo, P ^{[1
]}

Martin-Bragado, I ^{[1
]}

Rubio, JE ^{[1
]}

Barbolla, J ^{[1
]}

机构：

[1] Univ Valladolid, Dept Elect, E-47011 Valladolid, Spain

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 25期

关键词：

D O I：

10.1063/1.1948533

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A comprehensive atomistic model for arsenic in silicon which includes charge effects and is consistent with first-principles calculations for arsenic-vacancy cluster energies has been developed. Emphasis has been put in reproducing the electrical deactivation and the annealed profiles in preamorphized silicon. The simulations performed with an atomistic kinetic Monte Carlo simulator suggest a predominant role of the mobile interstitial arsenic in deactivation experiments and provide a good understanding of the arsenic behavior in preamorphized silicon during annealing. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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