ZnSTe-based Schottky barrier ultraviolet detectors with nanosecond response time

ZnSTe-based Schottky barrier photovoltaic detector arrays were fabricated on GaP(100) using a two-step molecular beam epitaxy growth approach. These detectors exhibit visible blind and ultraviolet (UV) sensitive response with a peak UV responsivity of 0.13 A/W and 1.23X10(6) V/W at 320 nm. The built-in potential of these detectors was determined to be 1.7 V. The temporal photocurrent response of a 400X400 mu m(2) detector was measured to be 1.2 ns, limited apparently by the resistance-capacitance (rc) constant of the detector structure. (C) 1998 American Institute of Physics. [S0003-6951(98)01142-5].