Impact of Oxygen Plasma Treatment on the Device Performance of Zinc Oxide Nanoparticle-Based Thin-Film Transistors

被引：68

作者：

Faber, Hendrik ^{[1
]}

Hirschmann, Johannes ^{[1
]}

Klaumuenzer, Martin ^{[2
]}

Braunschweig, Bjoern ^{[2
]}

Peukert, Wolfgang ^{[2
]}

Halik, Marcus ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, OMD, Dept Mat Sci, D-91058 Erlangen, Germany

[2] Univ Erlangen Nurnberg, Dept Chem & Biol Engn, Inst Particle Technol, D-91058 Erlangen, Germany

来源：

ACS APPLIED MATERIALS & INTERFACES | 2012年 / 4卷 / 03期

关键词：

zinc oxide; nanoparticles; plasma treatment; thin-film transistors; SUM-FREQUENCY GENERATION; ZNO NANOPARTICLES; GREEN LUMINESCENCE; LOW-TEMPERATURE; GROWTH; PHOTOLUMINESCENCE; NANOSTRUCTURES; CRYSTALS; NANORODS;

D O I：

10.1021/am2018223

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thin-films of zinc oxide nanoparticles were investigated by photoluminescence spectroscopy and a broad defect-related yellow-green emission was observed. Oxygen plasma treatment was applied in order to reduce the number of defects, and the emission intensity was quenched to 4% of the initial value. Thin-film transistors that incorporate the nanoparticles as active semiconducting layers show an improved device performance after oxygen plasma treatment. The maximum drain current and the charge carrier mobility increased more than 1 order of magnitude up to a nominal value of 23 cm(2) V-(1) s(-1) and the threshold voltage was lowered.

引用

页码：1693 / 1696

页数：4

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