Impact of Oxygen Plasma Treatment on the Device Performance of Zinc Oxide Nanoparticle-Based Thin-Film Transistors

被引：68

作者：

Faber, Hendrik ^{[1
]}

Hirschmann, Johannes ^{[1
]}

Klaumuenzer, Martin ^{[2
]}

Braunschweig, Bjoern ^{[2
]}

Peukert, Wolfgang ^{[2
]}

Halik, Marcus ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, OMD, Dept Mat Sci, D-91058 Erlangen, Germany

[2] Univ Erlangen Nurnberg, Dept Chem & Biol Engn, Inst Particle Technol, D-91058 Erlangen, Germany

来源：

ACS APPLIED MATERIALS & INTERFACES | 2012年 / 4卷 / 03期

关键词：

zinc oxide; nanoparticles; plasma treatment; thin-film transistors; SUM-FREQUENCY GENERATION; ZNO NANOPARTICLES; GREEN LUMINESCENCE; LOW-TEMPERATURE; GROWTH; PHOTOLUMINESCENCE; NANOSTRUCTURES; CRYSTALS; NANORODS;

D O I：

10.1021/am2018223

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thin-films of zinc oxide nanoparticles were investigated by photoluminescence spectroscopy and a broad defect-related yellow-green emission was observed. Oxygen plasma treatment was applied in order to reduce the number of defects, and the emission intensity was quenched to 4% of the initial value. Thin-film transistors that incorporate the nanoparticles as active semiconducting layers show an improved device performance after oxygen plasma treatment. The maximum drain current and the charge carrier mobility increased more than 1 order of magnitude up to a nominal value of 23 cm(2) V-(1) s(-1) and the threshold voltage was lowered.

引用

页码：1693 / 1696

页数：4

共 50 条

[21] Effect of Oxygen Plasma Treatment on the Performance of GQDs-Modulated InGaZnO Thin-Film Transistors
Xu, Xiaofen
He, Gang
Wang, Leini
Wang, Wenhao
Fu, Can
Li, Yujiao
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (06) : 3697 - 3704
[22] Stability and reliability for Zinc-Oxide Thin-Film Transistors by O2 plasma treatment
You, Hsin-Chiang
Huang, Chao-Yuan
Wu, Ya-Ling
2014 INTERNATIONAL SYMPOSIUM ON COMPUTER, CONSUMER AND CONTROL (IS3C 2014), 2014, : 462 - 465
[23] Electrical performance and stability of tungsten indium zinc oxide thin-film transistors
Chauhan, Ram Narayan
Tiwari, Nidhi
Shieh, Han-Ping D.
Liu, Po-Tsun
MATERIALS LETTERS, 2018, 214 : 293 - 296
[24] Performance of Indium Gallium Zinc Oxide Thin-Film Transistors in Saline Solution
S. Gupta
S. P. Lacour
Journal of Electronic Materials, 2016, 45 : 3192 - 3194
[25] Performance of Indium Gallium Zinc Oxide Thin-Film Transistors in Saline Solution
Gupta, S.
Lacour, S. P.
JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (06) : 3192 - 3194
[26] ZnO-based thin-film transistors of optimal device performance
Bae, HS
Im, S
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (03): : 1191 - 1195
[27] High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment
Nayak, Pradipta K.
Hedhili, M. N.
Cha, Dongkyu
Alshareef, H. N.
APPLIED PHYSICS LETTERS, 2012, 100 (20)
[28] Impact of active layer thickness in thin-film transistors based on Zinc Oxide by ultrasonic spray pyrolysis
Dominguez, Miguel A.
Flores, Francisco
Luna, Adan
Martinez, Javier
Luna-Lopez, Jose A.
Alcantara, Salvador
Rosales, Pedro
Reyes, Claudia
Orduna, Abdu
SOLID-STATE ELECTRONICS, 2015, 109 : 33 - 36
[29] Soution-processed thin-film transistors based on zinc oxide nanoparticles
Oh, Jiyoung
Hasan, Musarrat
Park, Jonghyurk
Lim, Sang-Chul
Kang, Seong-Young
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2011, 241
[30] Thin-film transistors based on zinc oxide films by ultrasonic spray pyrolysis
Dominguez-Jimenez, M. A.
Flores-Gracia, F.
Luna-Flores, A.
Martinez-Juarez, J.
Luna-Lopez, J. A.
Alcantara-Iniesta, S.
Rosales-Quintero, P.
Reyes-Betanzo, C.
REVISTA MEXICANA DE FISICA, 2015, 61 (02) : 123 - 126

← 1 2 3 4 5 →