Optimized Si-cap layer thickness for tensile-strained-Si/compressively strained SiGe dual-channel transistors in 0.13 μm complementary metal oxide semiconductor technology

We report the fabrication of a tensile-strained-Si/compressively strained Si0.72Ge0.28 dual-channel n-type metal-oxide-semiconductor field-effect transistor (NMOSFET) and p-type metal-oxide-semiconductor field-effect transistor (PMOSFET), which were grown on a relaxed Si0.8Ge0.2 virtual substrate using the 0.13 mu m CMOS process and we integrate both devices at the same wafer. It is found that a device based on such a structure that is good for optimizing NMOSFET and PMOSFET performance uses a thinner Si-cap layer of 5 nm for PMOSFET and a thicker Si-cap layer of approximately 15 nm for NMOSFET; this offers the most efficient enhancement of carrier mobility. By constraining the Si-cap layer thickness, the current drives of the N and PMOSFETs were increased by 16% and 12%, respectively, for channel lengths down to 0.13 um.