Luminescence and reflectivity characterization of AlGaN/GaN high electron mobility transistors

被引：1

作者：

Baron, N. ^{[1
]}

Leroux, M. ^{[1
]}

Zeggaoui, N. ^{[1
]}

Corfdir, P. ^{[1
]}

Semond, F. ^{[1
]}

Bougrioua, Z. ^{[1
]}

Azize, M. ^{[1
]}

Cordier, Y. ^{[1
]}

Massies, J. ^{[1
]}

机构：

[1] CNRS, Ctr Rech Hetero Epitaxie & Ses Applicat, F-06560 Valbonne, France

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 | 2009年 / 6卷

关键词：

OUTPUT POWER-DENSITY; OPTICAL CHARACTERIZATION; GAN; SILICON; SI(111); HEMTS; HETEROSTRUCTURES; SUBSTRATE; SAPPHIRE; GANHEMTS;

D O I：

10.1002/pssc.200880828

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on the optical characterization by photoluminescence and reflectivity of AlxGa1-xN/GaN high electron mobility transistor structures. The samples studied were grown either by molecular beam epitaxy or metal-organic vapor phase epitaxy, on silicon (111) or sapphire (0001) substrates. We focus on a broad luminescence band, shown to be related to the GaN cap layer (surface quantum-well) and its injection intensity dependence. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：S715 / S718

页数：4

共 50 条

[31] Measurement of frequency dispersion of AlGaN/GaN high electron mobility transistors
Mizutani, T., 1600, Japan Society of Applied Physics (42):
[32] Current relaxation analysis in AlGaN/GaN high electron mobility transistors
Polyakov, Alexander Y.
Smirnov, N. B.
Shchemerov, Ivan V.
Lee, In-Hwan
Jang, Taehoon
Dorofeev, Alexey A.
Gladysheva, Nadezhda B.
Kondratyev, Eugene S.
Turusova, Yulia A.
Zinovyev, Roman A.
Turutin, A. V.
Ren, Fan
Pearton, S. J.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2017, 35 (01):
[33] Thermal Storage of AlGaN/GaN High-Electron-Mobility Transistors
Zhao, Miao
Wang, Xinhua
Liu, Xinyu
Huang, Jun
Zheng, Yingkui
Wei, Ke
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2010, 10 (03) : 360 - 365
[34] Detection of halide ions with AlGaN/GaN high electron mobility transistors
Kang, BS
Ren, F
Kang, MC
Lofton, C
Tan, WH
Pearton, SJ
Dabiran, A
Osinsky, A
Chow, PP
APPLIED PHYSICS LETTERS, 2005, 86 (17) : 1 - 3
[35] Influence of Current Collapse in AlGaN/GaN High Electron Mobility Transistors
Patanvariya, Deven G.
Kumar, Sudhan
Giri, Lalat Indu
2019 10TH INTERNATIONAL CONFERENCE ON COMPUTING, COMMUNICATION AND NETWORKING TECHNOLOGIES (ICCCNT), 2019,
[36] Thermal effects in AlGaN/GaN/Si high electron mobility transistors
Saidi, I.
Cordier, Y.
Chmielowska, M.
Mejri, H.
Maaref, H.
SOLID-STATE ELECTRONICS, 2011, 61 (01) : 1 - 6
[37] Mechanical Analysis of Stretchable AlGaN/GaN High Electron Mobility Transistors
Tompkins, R. P.
Mahaboob, I.
Shahedipour-Sandvik, F.
Lazarus, N.
WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 17, 2016, 72 (05): : 89 - 95
[38] Processes and device technologies for AlGaN/GaN high electron mobility transistors
Adesida, I.
Kumar, V.
Mohammed, F.
Wang, L.
Basu, A.
Kim, D. -H.
Lanford, W.
2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2006, : 140 - +
[39] Neutron irradiation effects on AlGaN/GaN high electron mobility transistors
吕玲
张进成
薛军帅
马晓华
张伟
毕志伟
张月
郝跃
Chinese Physics B, 2012, 21 (03) : 360 - 364
[40] AlGaN/GaN high electron mobility transistors on Si(111) substrates
Chumbes, EM
Schremer, AT
Smart, JA
Yang, Y
MacDonald, NC
Hogue, D
Komiak, JJ
Lichwalla, SJ
Leoni, RE
Shealy, JR
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) : 420 - 426

← 1 2 3 4 5 →