Electroluminescence of erbium-oxygen-doped silicon diodes grown by molecular beam epitaxy

被引：140
|
作者：
Stimmer, J
Reittinger, A
Nutzel, JF
Abstreiter, G
Holzbrecher, H
Buchal, C
机构：
[1] FORSCHUNGSZENTRUM JULICH, FORSCHUNGSZENTRUM, ZCH, D-52425 JULICH, GERMANY
[2] FORSCHUNGSZENTRUM JULICH, FORSCHUNGSZENTRUM, ISI 2, D-52425 JULICH, GERMANY
来源：
APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 23期
关键词：
D O I：
10.1063/1.116577
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have fabricated erbium-oxygen-doped silicon light emitting diodes with molecular beam epitaxy by simultaneously evaporating erbium and silicon and providing a suitable background pressure of oxygen. In reverse bias, the diodes show intense room-temperature electroluminescence at lambda = 1.54 mu m originating from the intra-4f transition or erbium. This luminescence does not show temperature quenching between 4 and 300 K. In forward bias the erbium peak intensity is reduced by a factor of 30 at low temperatures and shows temperature quenching. (C) 1996 American Institute of Physics.
引用
收藏
页码：3290 / 3292
页数：3
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