Influence of oxygen incorporation on beryllium and silicon doped InP grown by solid source molecular beam epitaxy

被引：4
|
作者：
Xiang, N [1 ]
Likonen, J [1 ]
Turpeinen, J [1 ]
Saarinen, M [1 ]
Toivonen, M [1 ]
Pessa, M [1 ]
机构：
[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland
来源：
FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS | 2000年 / 4086卷
关键词：
InP; solid source MBE; oxygen; silicon doping; beryllium doping;
D O I：
10.1117/12.408321
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The effect of oxygen incorporation on electrical and optical properties of Be- and Si-doped InP grown by solid source molecular beam epitaxy has been studied. Oxygen was observed to reduce both the Be and Si doping efficiencies in WP and to introduce recombination centers that degrade the photoluminescence property. The compensation in Be-InP was more pronounced than in Si-InP. With high oxygen impurity concentration, Be-lnP was found to be n-type in Hall measurements. Electrical inactivity of Be is likely due to the formation of Be-O complexes in InP. Oxygen was originated from the phosphorus source and could be reduced by employing lowered phosphorus cracker temperature.
引用
收藏
页码：72 / 75
页数：4
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