Current Transport, Photosensitive, and Dielectric Properties of PVA/n-Si Heterojunction Photodiode

The results showed that the annealing of polyvinyl alcohol (PVA) at 450 K has improved its electrical conductivity. Scientists had previously overlooked its great characteristics because of its insulating properties however, PVA showed a considerable increase in conductivity, making it a promising material for optoelectronic devices. The electrical and dielectric properties of PVA/n-Si heterostructure were investigated. The ideality factor, barrier height, and series resistance were measured at different temperatures using various approaches as Nord, Chueng, and the conventional method. A detailed analysis of Ac conductivity, real and imaginary parts of the impedance (Z', Z") were examined at different temperatures, voltages, and frequencies. The results showed that the value of the imaginary part of the impedance Z" changes with temperature, voltage, and frequency; however, the novelty here is that Z" only takes positive values if the frequency is set to a very low value, such as 10 Hz. The photocurrent properties were also studied confirming that PVA/n-Si structure is responsive to daylight illumination.