Optimizing the dielectric constant and dissipation factor of PVA/n-Si Schottky diode

被引：6
|
作者：
Ashery, Adel [1 ]
Turky, Gamal M. [2 ]
El-Sayed, Afaf [3 ,4 ]
机构：
[1] Natl Res Ctr, Solid State Phys Dept, Giza 12622, Egypt
[2] Natl Res Ctr, Microwave Phys & Dielect Dept, Giza 12622, Egypt
[3] Al Azhar Univ, Fac Sci, Phys Dept, Cairo 11754, Egypt
[4] Univ Sci & Technol, Zewail City Sci & Technol, Nanosci Program, Giza 12578, Egypt
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2021年 / 272卷
关键词：
PVA; n-Si structure; Schottky diode; Dielectric constant; Dissipation factor; AC ELECTRICAL-CONDUCTIVITY; POLY(VINYL ALCOHOL); SERIES RESISTANCE; SURFACE-STATES; FREQUENCY; TEMPERATURE; DEPENDENCE; PROFILES; RELAXATION; RANGE;
D O I：
10.1016/j.matchemphys.2021.125051
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this article, we map the dielectric properties of manufactured metal-polymer-semiconductor (MPS) Schottky barrier diode consisting of aluminum (Al), polyvinyl alcohol (PVA), and n-type silicon (n-Si), under different conditions of applied frequency (1 Hz-20 MHz), voltage (-2-2 volts), and temperature (-50-90 degrees C). By tuning all these parameters, we could activate all possible polarization modes at the PVA/Si interface and reach tremendous values for the dielectric constant of our sample (epsilon ' 3000) with a conveniently low dissipation factor (tan delta< 2) at operating frequencies of 0.2 MHz-0.2 kHz, voltage=2 volts, and temperature >= 30 <degrees>C. These promising values are motivating for using Al/PVA/n-Si Scottky diode structure in innovative energy storage applications.
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页数：8
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