Investigations on structure, dielectric and ferroelectric properties of SrBi2Ta2O9 ceramic via A-site defect engineering

被引:0
|
作者
Sahu, G. K. [1 ]
Behera, S. [1 ]
Mishra, S. R. [2 ]
机构
[1] Centurion Univ Technol & Management, Dept Phys, Bhubaneswar, India
[2] Gandhi Inst Educ & Technol, Dept Chem, Khordha, India
关键词
Bismuth layered structure; dielectric parameters; hysteresis curve; ferroelectric; ELECTRICAL-PROPERTIES; POLARIZATION PROPERTIES; THIN-FILMS; IMPEDANCE; BEHAVIOR; CONDUCTIVITY; ENHANCEMENT; X=0;
D O I
10.1080/01411594.2022.2057855
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Yttrium-modified bismuth-layered ferroelectric SrBi2Ta2O9 (SBT) with general formula SrBi2-xY3x/4Ta2O9 (where x = 0.00, 0.025, 0.05, 0.075 and 0.10) are prepared by mixed oxide route. The structural, dielectric, ferroelectric and conductivity behavior of the above compounds for each composition of Y is discussed. The formation of monophase materials is noted from the X-ray diffraction pattern. The structure of the grains is studied using Scanning electron microscopy. The variation of the dielectric permittivity with temperature at some particular frequencies manifests a diffuse order phase transition with reduced T-c (ferroelectric transition temperature) and epsilon(r) (relative permittivity) with respect to higher concentration of Y. The ferroelectric properties in the materials are confirmed using hysteresis (P-E) loops. The remnant polarization of the materials is found to increase with the addition of Y while the coercive field follows the reverse trend.
引用
收藏
页码:445 / 455
页数:11
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